View FDMB3800N_708954.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDMB3800N Dual N-Channel PowerTrench(R) MOSFET
January 2006
FDMB3800N
Dual N-Channel PowerTrench(R) MOSFET 4.8A, 30V, 40m
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
LE
A
REE I DF
Features
RDS(ON) = 40 m @ VGS = 10 V RDS(ON) = 51 m @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability. RoHS Compliant
Absolute Maximum Ratings TA = 25C unless otherwise noted
Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) Ratings 30 20 4.8 9 1.6 0.75 -55 to +150 Units V V A W C
Thermal Characteristics
RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 80 165 C/W
Package Marking and Ordering Information
Device Marking 3800 Device FDMB3800N Reel Size 7inch
1
(c)2006 Fairchild Semiconductor Corporation FDMB3800N Rev. C
M ENTATIO LE N MP
GATE
SOURCE Q1
5 6 7 8 4 3 2 1
Q2
Tape Width 8mm
Quantity 3000 units
www.fairchildsemi.com
FDMB3800N Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55C VGS = 20V, VDS = 0V 30 24 1 10 100 A nA V mV/C
On Characteristics (Note 2)
VGS(th) VGS(th) TJ RDS(ON) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250A ID = 250A, Referenced to 25C VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4.3A VGS = 10V, ID = 4.8A TJ = 125C VGS = 10V, VDS = 5V VDS = 5V, ID = 4.8A 1 10 1.9 -4 32 41 43 14 3 40 51 61 A S m V mV/C
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f=1.0MHz 350 90 40 3 465 120 60 pF pF pF
Switching Characteristics (Note 2)
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15V, ID = 7.5A, VGS = 5V VDD = 15V, ID = 1A VGS = 10V, RGEN = 6 8 5 21 2 4 1.0 1.5 16 10 34 10 5.6 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS =1.25 A (Note 2) IF= 4.8A, dIF/dt=100A/s 0.8 1.25 1.2 22 9 A V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. 2: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
a) 80C/W when mounted on a 1in2 pad of 2 oz copper
b) 165C/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper
2 FDMB3800N Rev. C
www.fairchildsemi.com
FDMB3800N Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
10
I D , D RAIN CURRENT (A)
8
6.0V
3.5V
N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E
VGS = 10V
2.8
4.5V
2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8
VGS = 3.0V
6 3.0V
4
3.5V 4.0V 4.5V 6.0V
2 2.5V 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN-SOURCE VOLTAGE (V)
10V
10
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
1.6
DRAIN TO SOURCE ON-RESISTANCE (OHM)
Figure 2. On Resistance vs Drain Current and Gate Voltage
0.102 ID = 2.4A 0.092 0.082 0.072 0.062 0.052 0.042 0.032 0.022 TJ = 25oC
o
N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E
ID = 4.8A VGS = 10V
1.4
1.2
1
TJ = 125 C
0.8
0.6 -50
-25
0
25
50
75
100
125
150
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Temperature
15
o
Figure 4. On Resistance vs Gate to Source Voltage
10 I S , R E V E R S E D R A IN C U R R E N T (A )
VDS = 5V I D , D R A IN C U R R E N T (A ) 12
TJ = -55 C
o
25 C 125 C
o
VGS = 0V
1
9
0.1
TJ = 125oC
6
0.01
25oC
-55oC
3
0.001
0 1.5
0.0001
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
3 FDMB3800N Rev. C
www.fairchildsemi.com
FDMB3800N Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
10 V G S , G A T E -S O U R C E V O L TA G E (V ) ID = 4.8A 8 VDS = 10V 20V 15V
500 C A P A C IT A N C E (p F ) 400 300 200 100 600
f = 1MHz VGS = 0 V
Ciss
6
4
Coss
2
Crss
0 0 1 2 3 4 5 6 7 8 Qg, GATE CHARGE (nC)
0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain to Source Voltage
6 5 ID, DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
10
RDS(ON) LIMIT 100us 1ms 10ms
4 3 2 1 0
VGS = 10V
1 VGS = 10V SINGLE PULSE o RJA = 165 C/W TA = 25oC 0.01 0.1 1 10
VGS = 4.5V
100ms 1s 10s DC 100
RJA = 80C/W
0.1
25
50
75 100 125 o TA, AMBIENT TEMPERATURE ( C)
150
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
P(pk), PEAK TRANSIENT POWER (W)
50 SINGLE PULSE RJA = 165C/W TA= 25C
40
30
20
10
0 0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
4 FDMB3800N Rev. C
www.fairchildsemi.com
FDMB3800N Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
NORMALIZED THERMAL IMPEDANCE, ZJA
1
D = 0.5 0.2 0.1 0.05 0.02 0.01
0.1
P(pk) t1 t2 Peak TJ = TA + PDM *RJA* ZJA Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
Figure 12. Transient Thermal Response Curve
5 FDMB3800N Rev. C
www.fairchildsemi.com
FDMB3800N Dual N-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
6 FDMB3800N Rev. C
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

▲Up To Search▲

Price & Availability of FDMB3800N

	To Download FDMB3800N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .